vs-1n1...a, vs-1n36..a series www.vishay.com vishay semiconductors revision: 18-may-15 1 document number: 93493 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 medium power silicon rectifier diodes, (stud version), 12 a features ? voltage ratings from 50 v to 1000 v ? high surge capability ? low thermal impedance ? high temperature rating ? can be supplied as jan and jan-tx devices in accordance with mil-s-19500/260 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? note ? jedec ? registered values are in bold electrical specifications notes ? jedec registered values are in bold ? basic part number indicates cathod e to case; for anode to case, add r to pa rt number, e.g., 1n1199 r a product summary i f(av) 12 a package do-203aa (do-4) circuit configuration single diode do-203aa (do-4) major ratings and characteristics parameter test conditions values units i f(av) 12 a t c 150 c i fsm 50 hz 230 a 60 hz 240 i 2 t 50 hz 260 a 2 s 60 hz 240 t j -65 to 200 c v rrm range 50 to 1000 v voltage ratings type number v rrm , maximum repetitive peak reverse voltage (t c = -65 c to 200 c) v v r(rms) , maximum rms reverse voltage (t c = -65 c to 200 c) v v rsm , maximum non-repetitive peak reverse voltage (t c = -65 c to 200 c) v v rm , maximum direct reverse voltage (t c = -65 c to 200 c) v vs-1n1199a 50 35 100 50 vs-1n1200a 100 70 200 100 VS-1N1201A 150 105 300 150 vs-1n1202a 200 140 350 200 vs-1n1203a 300 210 450 300 vs-1n1204a 400 280 600 400 vs-1n1205a 500 350 700 500 vs-1n1206a 600 420 800 600 vs-1n3670a 700 490 900 700 vs-1n3671a 800 560 1000 800 vs-1n3672a 900 630 1100 900 vs-1n3673a 1000 700 1200 1000
vs-1n1...a, vs-1n36..a series www.vishay.com vishay semiconductors revision: 18-may-15 2 document number: 93493 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? jedec registered values are in bold (1) i 2 t for time t x = i 2 ? t x ? t x (2) maximum peak reverse current (i rm ) under same conditions ? 2 x rated i r(av) ? note ? jedec registered values are in bold forward conduction parameter symbol test conditions values units maximum average forward current ? at case temperature i f(av) 180 sinusoidal conduction 12 a 150 c maximum peak one cycle non-repetitive surge current i fsm half cycle 50 hz sine wave ? or 6 ms rectangular pulse following any rated load condition and with rated v rrm applied 230 a half cycle 60 hz sine wave ? or 5 ms rectangular pulse 240 half cycle 50 hz sine wave ? or 6 ms rectangular pulse following any rated load condition and with v rrm applied following surge = 0 v 275 half cycle 60 hz sine wave ? or 5 ms rectangular pulse 285 maximum i 2 t for fusing i 2 t t = 10 ms with rated v rrm applied following surge, ? initial t j = 200 c 260 a 2 s t = 8.3 ms 240 maximum i 2 t for individual ? device fusing t = 10 ms with v rrm = 0 v following surge, initial t j = 200 c 370 t = 8.3 ms 340 maximum i 2 ? t for individual ? device fusing i 2 ? t (1) t = 0.1 ms to 10 ms, v rrm = 0 v following surge 3715 a 2 ? s maximum forward voltage drop v fm i f(av) = 12 a (38 a peak), t c = 25 c 1.35 v maximum average ? reverse current v rrm = 50 v i r(av) (2) maximum rated i f(av) and t c 3.0 ma v rrm = 100 v 2.5 v rrm = 150 v 2.25 v rrm = 200 v 2.0 v rrm = 300 v 1.75 v rrm = 400 v 1.5 v rrm = 500 v 1.25 v rrm = 600 v 1.0 v rrm = 700 v 0.9 v rrm = 800 v 0.8 v rrm = 900 v 0.7 v rrm = 1000 v 0.6 thermal and mechanical specifications parameter symbol test conditions values units maximum operating case and storage temperature range t c , t stg -65 to 200 c maximum internal thermal resistance, junction to case r thjc dc operation 2.0 c/w thermal resistance, ? case to sink r thcs mounting surface, smooth, flat and greased 0.5 mounting torque minimum torque applied to nut; non-lubricated threads 1.36 (12) n m (lbf in) maximum 1.69 (15) minimum torque applied to nut; lubricated threads 1.07 (9.45) maximum 1.30 (11.55) minimum torque applied to device case; lubricated threads 1.17 (10.35) maximum 1.43 (12.65) approximate weight 7.0 g 0.25 oz. case style jedec do-203aa (do-4)
vs-1n1...a, vs-1n36..a series www.vishay.com vishay semiconductors revision: 18-may-15 3 document number: 93493 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - average forward current vs. maximum allowable case temperature fig. 2 - maximum low leve l forward power loss vs. average forward current fig. 3 - maximum high level forward power loss vs. average forward current fig. 4 - maximum forward voltage vs. forward current fig. 5 - maximum transient thermal impedance, junction to case vs. pulse duration fig. 6 - maximum no n-repetitive 50 hz surge current vs. number of current pulses maximum allowable case temperature (c) average forwar d current over full cycle (a) +180 c wave +180 c wave +60 c & wave +120 c & wave dc conduction period 0 0 2468 12 10 14 18 16 20 200 220 180 160 140 120 100 average forwar d power loss over full cycle (w) average forwar d current over full cycle (a) t j = 200c conduction period 0 0 24 6810 12 14 10 8 6 4 2 +180 c wave +180 c wave +120 c & wave +60 c & wave dc average forwar d power loss over full cycle (w) average forwar d current over full cycle (a) 10 2 10 1.0 1.0 10 2 5 25 10 2 25 10 3 25 2 5 10 3 10 4 10 2 2 5 2 5 +180 c wave +180 c wave +120 c & wave +120 c & wave t j = 200c conduction period dc i f - instantaneous forwar d current (a) instantaneous forwar d voltage (v) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 2 10 3 10 1.0 2 5 2 5 2 5 25 c t j = 200 c t - s quare wave pulse duration (s) z thjc - transient thermal impe d ance (c/w) 1.0 10 10 -1 10 -2 2 5 25 25 25 25 25 2 5 2 5 1 10 10 -1 10 -2 10 -3 10 -4 s teady s tate value = 2.0 c/w peak half s ine wave forwar d current (a) number of equal amplitu d e half cycle current pulses (n) 2 4 6 8 10 20 40 60 1 1 100 200 300 0 at any rated load condition and with rated v rrm applied following s urge 60 hz 50 hz links to related documents dimensions www.vishay.com/doc?95311
document number: 95311 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jun-08 1 do-203aa (do-4) outline dimensions vishay semiconductors dimensions in millimeters (inches) 3.30 (0.13) 4.00 (0.16) 5.50 (0.22) min. 10.20 (0.40) max. 11.50 (0.45) 10.70 (0.42) 10/32" unf-2a for metric devices: m5 x 0.8 0.8 0.1 (0.03 0.004) r 0.40 r (0.02) ? 6.8 (0.27) ? 1.80 0.20 (? 0.07 0.01) 3.50 (0.14) 20.30 (0.80) max. 11 (0.43) 2 + 0.3 0 (0.08 ) + 0.01 0
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